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1/13 june 2004 vnd10b double channel high side smart powe r solid state relay rev. 2 table 1. general features note: 1. in= nominal current according to iso definition for high side automotive switch. the nominal current is the current at t c = 85 c for battery voltage of 13v which produces a voltage drop of 0.5 v. output current (continuous): 14 a @ t c =85c per channel 5v logic level compatible input thermal shut-down under voltage protection open drain diagnostic output inductive load fast demagnetization very low stand-by power dissipation description the vnd10b is a monolithic device made using stmicroelectronics vipower technology, intended for driving resistive or inductive loads with one side grounded. this device has two channels, and a common diagnostic. built-in thermal shut-down protects the chip from over temperature and short circuit. the status output provides an indication of open load in on state, open load in off state, overtemperature conditions and stuck-on to v cc . figure 1. package table 2. order codes type v dss r ds(on) i n (1) v cc vnd10b 40 v 0.1 ? 3.4 a 26 v pentawatt (vertical) pentawatt (horizontal) pentawatt (in-line) package tube tape and reel pentawatt vert. vnd10b ? pentawatt hor. vnd10b(011y) ? pentawatt in line vnd10b(012y) ? obsolete product(s) - obsolete product(s)
vnd10b 2/13 figure 2. block diagram table 3. absolute maximum ratings symbol parameter value unit v (br)dss drain-source breakdown voltage 40 v i out output current (cont.) at t c = 85 c 14 a i out (rms) rms output current at t c = 85 c 14 a i r reverse output current at t c = 85 c ?14 a i in input current 10 ma ? v cc reverse supply voltage ?4 v i stat status current 10 ma v esd electrostatic discharge (1.5 k ?; 100 pf) 2000 v p tot power dissipation at t c = 25 c 75 w t j junction operating temperature -40 to 150 c t stg storage temperature -55 to 150 c obsolete product(s) - obsolete product(s)
3/13 vnd10b figure 3. connection diagram figure 4. current and voltage conventions table 4. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1.65 c/w r thj-amb thermal resistance junction-ambient max 60 c/w obsolete product(s) - obsolete product(s)
vnd10b 4/13 electrical characteristics (8 < v cc < 16 v; -40 t j 125 c unless otherwise specified) table 5. power note: 2. in= nominal current according to iso definition for high side automotive switch. the nominal current is the current at t c = 85 c for battery voltage of 13v which produces a voltage drop of 0.5 v. table 6. switching note: 3. see switching time waveforms. table 7. logic input note: 4. the v ih is internally clamped at 6v about. it is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 ma at the input pin. symbol parameter test conditions min. typ. max. unit v cc supply voltage 6 13 26 v i n (2) nominal current t c = 85 c; v ds(on) 0.5; v cc = 13 v 3.4 5.2 a r on on state resistance i out = i n ; v cc = 13 v; t j = 25 c 0.065 0.1 ? i s supply current off state; t j = 25 c; v cc = 13 v 35 100 a v ds(max) maximum voltage drop i out = 13 a; t j = 85 c; v cc = 13 v 1.2 2 v r i output to gnd internal impedance t j = 25 c 5 10 20 k ? symbol parameter test conditions min. typ. max. unit t d(on) (3) turn-on delay time of output current r out = 2.7 ? 5 35 200 s t r (3) rise time of output current r out = 2.7 ? 28 110 360 s t d(off) (3) turn-off delay time of output current r out = 2.7 ? 10 140 500 s t f (3) fall time of output current r out = 2.7 ? 28 75 360 s (di/dt) on turn-on current slope r out = 2.7 ? 0.003 0.1 a/s (di/dt) off turn-off current slope r out = 2.7 ? 0.005 0.1 a/s symbol parameter test conditions min. typ. max. unit v il input low level voltage 1.5 v v ih input high level voltage 3.5 note 4 v v i(hyst) input hysteresis voltage 0.2 0.9 1.5 v i in input current v in = 5 v; t j = 25 c 30 100 a v icl input clamp voltage i in = 10 ma i in = ?10 ma 56 ?0.7 7v v obsolete product(s) - obsolete product(s)
5/13 vnd10b electrical characteristics (cont?d) table 8. protection and diagnostics note: 5. i ol(off) = (v cc -v ol )/r ol (see figure 5) 6. t povl t pol : iso definition (see figure 6). figure 5. note 5 relevant figure figure 6. note 6 relevant figure symbol parameter test conditions min. typ. max. unit v stat status voltage output low i stat = 1.6 ma 0.4 v v usd under voltage shut down 3.5 4.5 6 v v scl status clamp voltage i stat = 10 ma i stat = ?10 ma 56 ?0.7 7v v t tsd thermal shut-down temperature 140 160 180 c t sd(hyst.) thermal shut-down hysteresis 50 c t r reset temperature 125 c v ol (5) open voltage level off-state 2.5 4 5 v i ol open load current level 0.6 0.9 1.4 a t povl (6) status delay 5 10 s t pol (6) status delay 50 500 2500 s obsolete product(s) - obsolete product(s)
vnd10b 6/13 figure 7. switching time waveforms functional description the device has a common diagnostic output for both channels which indicates open load in on- state, open load in off-state, over temperature conditions and stuck-on to v cc . from the falling edge of t he input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tp ovl ) and in case of open open load (t pol ) respectively. this feature allows to discriminate the nature of the detected fault. to protect the device agains t short circuit and over current condition, the thermal protection turns the integrated power mos off at a minimum junction temperature of 140 c. when this temperature returns to 125 c the switch is automatically turned on again. in short circuit the protection reacts with virtually no delay, the sensor (one for each channel) being located inside each of the two power mos areas. this positioning allows the device to operate with one channel in automatic thermal cycling and the other one on a normal load. an internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (v demag ) of -18v. this function allows to greatly reduces the power dissipation according to the formula: p dem = 0.5 l load (i load ) 2 [(v cc +v demag )/ v demag ] f where f = switching frequency and v demag = demagnetization voltage the maximum inductance which causes the chip temperature to reach the shut-down temperature in a specified thermal environment is a function of the load current for a fixed v cc , v demag and f according to the above formula. in this device if the gnd pin is disconnected, with v cc not exceeding 16v, both channel will switch off. protecting the device against reverse battery the simplest way to protect the device against a continuous reverse battery voltage (-26v) is to insert a schottky diode between pin 1(gnd) and ground, as shown in the typical application circuit (figure 9). the consequences of the voltage drop across this diode are as follows: ? if the input is pulled to power gnd, a negative voltage of -v f is seen by the device. (v il , v ih thresholds and v stat are increased by v f with respect to power gnd). ? the undervoltage shutdown level is increased by v f . if there is no need for the control unit to handle external analog signals referred to the power gnd, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in figure 10), which becomes the common signal gnd for the whole control board avoiding shift of v ih , v il and v stat . this solution allows the use of a standard diode. obsolete product(s) - obsolete product(s)
7/13 vnd10b table 9. truth table note: 7. with additional external resistor. figure 8. waveforms input 1 input 2 output 1 output 2 diagnostic normal operation l h l h l h h l l h l h l h h l h h h h under voltage x x l l h thermal shutdown channel 1 h x l x l channel 2 x h x l l open load channel 1 h l x l h l x l l l (7) channel 2 x l h l x l h l l l (7) output shorted to v cc channel 1 h l x l h h x l l l channel 2 x l h l x l h h l l obsolete product(s) - obsolete product(s)
vnd10b 8/13 figure 9. typical application circuit with a schottky diode for reverse supply protection figure 10. typical application circ uit with separate signal ground obsolete product(s) - obsolete product(s)
9/13 vnd10b package mechanical table 10. pentawatt (vertical) mechanical data figure 11. pentawatt (vertical) package dimensions note: drawing is not to scale. symbol millimeters min typ max a 4.8 c 1.37 d2.4 2.8 d1 1.2 1.35 e0.35 0.55 f 0.8 1.05 f1 1 1.4 g3.23.43.6 g1 6.6 6.8 7 h2 10.4 h3 10.05 10.4 l2 23.05 23.4 23.8 l3 25.3 25.65 26.1 l5 2.6 3 l6 15.1 15.8 l7 6 6.6 dia. 3.65 3.85 obsolete product(s) - obsolete product(s)
vnd10b 10/13 table 11. pentawatt (horizontal) mechanical data figure 12. pentawatt (horizontal) package dimensions note: drawing is not to scale. symbol millimeters min typ max a 4.8 c 1.37 d2.4 2.8 d1 1.2 1.35 e0.35 0.55 f 0.8 1.05 f1 1 1.4 g3.23.43.6 g1 6.6 6.8 7 h2 10.4 h3 10.05 10.4 l 14.2 15 l1 5.7 6.2 l2 14.6 15.2 l3 3.5 4.1 l5 2.6 3 l6 15.1 15.8 l7 6 6.6 dia. 3.65 3.85 obsolete product(s) - obsolete product(s)
11/13 vnd10b table 12. pentawatt (in-line) mechanical data figure 13. pentawatt (in-line) package dimensions note: drawing is not to scale. symbol millimeters min typ max a 4.8 c 1.37 d2.4 2.8 d1 1.2 1.35 e0.35 0.55 f 0.8 1.05 f1 1 1.4 g3.23.43.6 g1 6.6 6.8 7 h2 10.4 h3 10.05 10.4 l2 23.05 23.4 23.8 l3 25.3 25.65 26.1 l5 2.6 3 l6 15.1 15.8 l7 6 6.6 dia. 3.65 3.85 obsolete product(s) - obsolete product(s)
vnd10b 12/13 revision history table 13. revision history date revision description of changes september-1994 1 first issue 18-june-2004 2 stylesheet update. no content change. obsolete product(s) - obsolete product(s)
13/13 vnd10b information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com obsolete product(s) - obsolete product(s)

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